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  switching diode dan217um l applications l dimensions (unit : mm) l land size figure (unit : mm) high speed switching l features 1)small mold, flat lead type. (umd3f) 2)high reliability l construction l structure silicon epitaxial planer l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw/total tj ? c tstg ? c f mhz l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - - 1.2 v i f =100ma reverse current i r - - 0.2 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4.0 ns v r =6v , i f =5ma , r l =50 reverse voltage (dc) 80 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 80 forward voltage(repetitive peak) 300 average rectified forward current 100 surge current(t=1s) 4 power dissipation 200 junction temperature 150 storage temperature - 55 to + 150 rated in slash put frequency 100 parameter capacitance between terminals reverse recovery time rohm : umd3f dot (year week factory) .. .. .. .. .. .. .. .. .. .. . .. .. .. 1/3 2011.12 - rev.a downloaded from: http:/// data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet dan217um 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 forward voltage v f (v) v f -i f characteristics forward current:i f (ma) ta=125 c ta=75 c ta=25 c ta= - 25 c 0.1 1 10 100 1000 10000 100000 0 20 40 60 80 ta=25 c ta=75 c ta=125 c reverse current:i r (na) reverse voltage v r (v) v r -i r characteristics 0.1 1 10 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r -ct characteristics f=1mhz 925 935 945 v f dispersion map forward voltage:v f (mv) ave: 934mv ta=25 c i f =100ma n=10pcs 0 10 20 30 40 50 reverse current:i r (na) i r dispersion map ta=25 c v r =80v n=10pcs ave: 7.0na 0.1 0.3 0.5 0.7 0.9 capacitance between terminals:ct(pf) ct dispersion map ta=25 c v r =0.5v f=1mhz n=10pcs ave: 0.64 pf 2/3 2011.12 - rev.a downloaded from: http:///
www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet dan217um 0 1 2 3 4 5 ave:2.46ns v r =6v i f =10ma r l =100 0 1 2 3 4 5 i fsm dispersion map peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc ave:2.4a trr dispersion map reverse recovery time:trr(ns) 0.1 1 10 100 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm -cycle characteristics 8.3ms i fsm 1cyc 8.3ms 1 10 100 0.1 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm -t characteristics 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j- a) rth(j-c) mounted on epoxy board time:t(s) rth-t characteristics transient thermal impedance:rth ( c/w) 0 5 10 15 20 c=200pf r=0 c=100pf r=1.5k electrostatic discharge test esd(kv) esd dispersion map ave:9.9kv ave:2.3kv 3/3 2011.12 - rev.a downloaded from: http:///
r1120 a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes downloaded from: http:///


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